Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:26154
- Qty Unit Price price
- 1 $4.414 $4.414
- 10 $4.37 $43.7
- 100 $4.326 $432.6
- 1000 $4.283 $4283
- 10000 $4.24 $42400
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STB120NF10T4
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB120NF10T4
- SKU：4574400
- Description：MOSFET N-CH 100V 110A D2PAK
User Guide
User Guide
STB120NF10T4 Details
MOSFET N-CH 100V 110A D2PAK
STB120NF10T4 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Pin Count: 4
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 245
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height: 4.6mm
- Length: 10.4mm
- Rise Time: 90 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Width: 9.35mm
- Pulsed Drain Current-Max (IDM): 480A
- Series: STripFET? II
- Current - Continuous Drain (Id) @ 25°C: 110A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Power Dissipation-Max: 312W Tc
- Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V
- Base Part Number: STB120N
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Number of Pins: 3
- Termination: SMD/SMT
- Voltage - Rated DC: 100V
- Dual Supply Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 25 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Current Rating: 120A
- Continuous Drain Current (ID): 110A
- Nominal Vgs: 4 V
- Fall Time (Typ): 68 ns
- Weight: 13.607771g
- Power Dissipation: 312W
- Resistance: 10.5mOhm
- Avalanche Energy Rating (Eas): 550 mJ
- Turn-Off Delay Time: 132 ns
- Rds On (Max) @ Id, Vgs: 10.5m Ω @ 60A, 10V
Search for similar products
STB120NF10T4 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STB120NF10T4
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
