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  • Manufacturer No:
    STF10NM60N
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4575140
  • Description:
    STMICROELECTRONICS STF10NM60N Power MOSFET, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
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Inventory:548
  • Qty Unit Price price
  • 1 $510.939 $510.939
  • 10 $505.88 $5058.8
  • 100 $500.871 $50087.1
  • 1000 $495.911 $495911
  • 10000 $491 $4910000

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  • Manufacturer No:
    STF10NM60N
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STF10NM60N
  • SKU:
    4575140
  • Description:
    STMICROELECTRONICS STF10NM60N Power MOSFET, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V

STF10NM60N Details

STMICROELECTRONICS STF10NM60N Power MOSFET, N Channel, 10 A, 600 V, 0.53 ohm, 10 V, 3 V

STF10NM60N Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • Factory Lead Time: 16 Weeks
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (ID): 10A
  • Case Connection: ISOLATED
  • FET Type: N-Channel
  • Power Dissipation: 25W
  • Operating Mode: ENHANCEMENT MODE
  • JEDEC-95 Code: TO-220AB
  • Fall Time (Typ): 15 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Length: 10.4mm
  • Turn-Off Delay Time: 32 ns
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Current - Continuous Drain (Id) @ 25°C: 10A Tc
  • Power Dissipation-Max: 25W Tc
  • Series: MDmesh? II
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
  • Base Part Number: STF10N
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • DS Breakdown Voltage-Min: 600V
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 8A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 10 ns
  • Width: 4.6mm
  • Rise Time: 12 ns
  • Package / Case: TO-220-3 Full Pack
  • Vgs (Max): ±25V
  • Height: 16.4mm
  • Avalanche Energy Rating (Eas): 200 mJ
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Drain-source On Resistance-Max: 0.55Ohm
  • Rds On (Max) @ Id, Vgs: 550m Ω @ 4A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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