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- Manufacturer No：STGD8NC60KT4
- Manufacturer：STMicroelectronics
- Category：Transistors - IGBTs - Single
- Datasheet：STGD8NC60KT4
- SKU：4575578
- Description：Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R
User Guide
User Guide
STGD8NC60KT4 Details
Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R
STGD8NC60KT4 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Part Status: Obsolete
- Element Configuration: Single
- Collector Emitter Breakdown Voltage: 600V
- Max Breakdown Voltage: 600V
- Max Collector Current: 15A
- Current - Collector Pulsed (Icm): 30A
- Peak Reflow Temperature (Cel): 225
- Polarity/Channel Type: N-CHANNEL
- Max Power Dissipation: 62W
- Series: PowerMESH?
- Test Condition: 390V, 3A, 10 Ω, 15V
- Switching Energy: 55μJ (on), 85μJ (off)
- Base Part Number: STGD8
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Finish: Matte Tin (Sn)
- Input Type: Standard
- Collector Emitter Voltage (VCEO): 600V
- Gate-Emitter Voltage-Max: 20V
- Operating Temperature: -55°C~150°C TJ
- Gate-Emitter Thr Voltage-Max: 6.5V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Subcategory: Insulated Gate BIP Transistors
- Power - Max: 62W
- Gate Charge: 19nC
- Td (on/off) @ 25°C: 17ns/72ns
- Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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