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- Manufacturer No：STB25NM60N-1
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB25NM60N-1
- SKU：4578231
- Description：MOSFET N-CH 600V 21A I2PAK
User Guide
User Guide
STB25NM60N-1 Details
MOSFET N-CH 600V 21A I2PAK
STB25NM60N-1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Gate to Source Voltage (Vgs): 25V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ): 24 ns
- Power Dissipation: 160W
- Pulsed Drain Current-Max (IDM): 84A
- Series: MDmesh? II
- Power Dissipation-Max: 160W Tc
- Turn-Off Delay Time: 94 ns
- Rds On (Max) @ Id, Vgs: 160m Ω @ 10.5A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- JESD-609 Code: e3
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Current Rating: 20A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 21A
- Vgs (Max): ±25V
- Rise Time: 18ns
- Drain-source On Resistance-Max: 0.16Ohm
- Current - Continuous Drain (Id) @ 25°C: 21A Tc
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Avalanche Energy Rating (Eas): 850 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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