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- Manufacturer No：STGB10NB37LZT4
- Manufacturer：STMicroelectronics
- Category：Transistors - IGBTs - Single
- Datasheet：STGB10NB37LZT4
- SKU：4578284
- Description：IGBT 440V 20A 125W D2PAK
User Guide
User Guide
STGB10NB37LZT4 Details
IGBT 440V 20A 125W D2PAK
STGB10NB37LZT4 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- Input Type: Standard
- Max Collector Current: 20A
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Polarity/Channel Type: N-CHANNEL
- Height: 4.6mm
- Case Connection: COLLECTOR
- Collector Emitter Voltage (VCEO): 440V
- Operating Temperature: -65°C~175°C TJ
- Power Dissipation: 125W
- Width: 9.35mm
- Rise Time: 340 ns
- Turn On Time: 860 ns
- Additional Feature: VOLTAGE CLAMPING
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
- Switching Energy: 2.4mJ (on), 5mJ (off)
- Turn Off Time-Nom (toff): 17800 ns
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Factory Lead Time: 8 Weeks
- Pin Count: 3
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Single
- Current Rating: 20A
- Terminal Finish: Matte Tin (Sn) - annealed
- Current - Collector Pulsed (Icm): 40A
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate-Emitter Thr Voltage-Max: 2.4V
- Length: 10.4mm
- Collector Emitter Breakdown Voltage: 440V
- Max Breakdown Voltage: 440V
- Subcategory: Insulated Gate BIP Transistors
- Max Power Dissipation: 125W
- Series: PowerMESH?
- Transistor Application: AUTOMOTIVE IGNITION
- Gate Charge: 28nC
- Base Part Number: STGB10
- Td (on/off) @ 25°C: 1.3μs/8μs
- Test Condition: 328V, 10A, 1k Ω, 5V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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