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  • Manufacturer No:
    STP11NK40ZFP
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4580139
  • Description:
    STMICROELECTRONICS STP11NK40ZFP MOSFET Transistor, N Channel, 9 A, 400 V, 550 mohm, 10 V, 3.75 V
  • Quantity:
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Inventory:222
  • Qty Unit Price price
  • 1 $397.513 $397.513
  • 10 $393.577 $3935.77
  • 100 $389.68 $38968
  • 1000 $385.821 $385821
  • 10000 $382 $3820000

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  • Manufacturer No:
    STP11NK40ZFP
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STP11NK40ZFP
  • SKU:
    4580139
  • Description:
    STMICROELECTRONICS STP11NK40ZFP MOSFET Transistor, N Channel, 9 A, 400 V, 550 mohm, 10 V, 3.75 V

STP11NK40ZFP Details

STMICROELECTRONICS STP11NK40ZFP MOSFET Transistor, N Channel, 9 A, 400 V, 550 mohm, 10 V, 3.75 V

STP11NK40ZFP Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Power Dissipation: 30W
  • JEDEC-95 Code: TO-220AB
  • Continuous Drain Current (ID): 9A
  • Width: 4.6mm
  • Length: 10.4mm
  • Rise Time: 20ns
  • Fall Time (Typ): 18 ns
  • Height: 9.3mm
  • Power Dissipation-Max: 30W Tc
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
  • Rds On (Max) @ Id, Vgs: 550m Ω @ 4.5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 400V
  • Case Connection: ISOLATED
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Additional Feature: HIGH RELIABILITY
  • Subcategory: FET General Purpose Power
  • Drain Current-Max (Abs) (ID): 9A
  • Turn On Delay Time: 20 ns
  • Vgs (Max): ±30V
  • Turn-Off Delay Time: 40 ns
  • Package / Case: TO-220-3 Full Pack
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Threshold Voltage: 3.75V
  • Current - Continuous Drain (Id) @ 25°C: 9A Tc
  • Series: SuperMESH?
  • Drain-source On Resistance-Max: 0.55Ohm
  • Base Part Number: STP11N

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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