Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:6576
- Qty Unit Price price
- 1 $1.74 $1.74
- 10 $1.722 $17.22
- 100 $1.704 $170.4
- 1000 $1.687 $1687
- 10000 $1.67 $16700
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STD25NF10LT4
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD25NF10LT4
- SKU：4584626
- Description：MOSFET N-CH 100V 25A DPAK
User Guide
User Guide
STD25NF10LT4 Details
MOSFET N-CH 100V 25A DPAK
STD25NF10LT4 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Pin Count: 3
- REACH SVHC: No SVHC
- Voltage - Rated DC: 100V
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 16V
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Current Rating: 25A
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn On Delay Time: 20 ns
- Current: 17A
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Turn-Off Delay Time: 58 ns
- Current - Continuous Drain (Id) @ 25°C: 25A Tc
- Height: 2.63mm
- Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
- Base Part Number: STD25N
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Voltage: 100V
- Threshold Voltage: 2.5V
- Max Junction Temperature (Tj): 175°C
- Element Configuration: Single
- Power Dissipation: 100W
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 25A
- Case Connection: DRAIN
- Length: 6.6mm
- Width: 6.2mm
- Fall Time (Typ): 20 ns
- Rise Time: 40 ns
- Weight: 4.535924g
- Resistance: 35mOhm
- Vgs (Max): ±16V
- Nominal Vgs: 2.5 V
- Power Dissipation-Max: 100W Tc
- Series: STripFET? II
- Avalanche Energy Rating (Eas): 450 mJ
- Rds On (Max) @ Id, Vgs: 35m Ω @ 12.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 5V
Search for similar products
STD25NF10LT4 Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STD25NF10LT4
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
