Add to like
Add to project list
Inventory:6235
  • Qty Unit Price price
  • 1 $1453.726 $1453.726
  • 10 $1439.332 $14393.32
  • 100 $1425.081 $142508.1
  • 1000 $1410.971 $1410971
  • 10000 $1397 $13970000

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    STD1NK60T4
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STD1NK60T4
  • SKU:
    4585369
  • Description:
    Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R

STD1NK60T4 Details

Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R

STD1NK60T4 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Drain Current-Max (Abs) (ID): 1A
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 600V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • JESD-30 Code: R-PSSO-G2
  • Length: 6.6mm
  • Width: 6.2mm
  • Vgs (Max): ±30V
  • Turn On Delay Time: 6.5 ns
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Power Dissipation-Max: 30W Tc
  • Resistance: 8.5Ohm
  • Height: 2.63mm
  • Current - Continuous Drain (Id) @ 25°C: 1A Tc
  • Rds On (Max) @ Id, Vgs: 8.5 Ω @ 500mA, 10V
  • Base Part Number: STD1NK
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Threshold Voltage: 3V
  • Current Rating: 1A
  • Continuous Drain Current (ID): 1A
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 600V
  • Gate to Source Voltage (Vgs): 30V
  • Pulsed Drain Current-Max (IDM): 4A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Power Dissipation: 30W
  • Subcategory: FET General Purpose Power
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Fall Time (Typ): 25 ns
  • Rise Time: 5 ns
  • JEDEC-95 Code: TO-252AA
  • Turn-Off Delay Time: 19 ns
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Series: SuperMESH?
  • Vgs(th) (Max) @ Id: 3.7V @ 250μA
  • Avalanche Energy Rating (Eas): 25 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V
  • Manufacturer Package Identifier: TO-252-P032P

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via