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- Manufacturer No：IRF840
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF840
- SKU：4588060
- Description：PowerMESH™ II Tube Through Hole N-Channel Mosfet Transistor 8A Tc 8A 125W Tc 125ns
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User Guide
IRF840 Details
PowerMESH™ II Tube Through Hole N-Channel Mosfet Transistor 8A Tc 8A 125W Tc 125ns
IRF840 Specification Parameters
- Surface Mount: NO
- Mounting Type: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 500V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- JESD-30 Code: R-PSFM-T3
- Pulsed Drain Current-Max (IDM): 32A
- HTS Code: 8541.29.00.95
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Feedback Cap-Max (Crss): 110 pF
- Series: PowerMESH? II
- Rds On (Max) @ Id, Vgs: 850m Ω @ 3.5A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Drain Current-Max (Abs) (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Configuration: SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Additional Feature: AVALANCHE RATED
- Power Dissipation-Max: 125W Tc
- Turn Off Time-Max (toff): 125ns
- Drain-source On Resistance-Max: 0.85Ohm
- Avalanche Energy Rating (Eas): 520 mJ
- Turn On Time-Max (ton): 93ns
- Base Part Number: IRF8
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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