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- Manufacturer No：STP7N52DK3
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP7N52DK3
- SKU：4591811
- Description：MOSFET N-CH 525V 6A TO-220
User Guide
User Guide
STP7N52DK3 Details
MOSFET N-CH 525V 6A TO-220
STP7N52DK3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Width: 4.6mm
- Vgs (Max): ±30V
- Length: 10.4mm
- Power Dissipation: 90W
- Fall Time (Typ): 4.2 ns
- Threshold Voltage: 3.75V
- Resistance: 1.15Ohm
- Vgs(th) (Max) @ Id: 4.5V @ 50μA
- Drain to Source Voltage (Vdss): 525V
- Power Dissipation-Max: 90W Tc
- Base Part Number: STP7N
- Rds On (Max) @ Id, Vgs: 1.15 Ω @ 3A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Pulsed Drain Current-Max (IDM): 24A
- Turn On Delay Time: 12 ns
- Height: 15.75mm
- Rise Time: 33 ns
- Drain to Source Breakdown Voltage: 620V
- Turn-Off Delay Time: 37 ns
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Additional Feature: ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas): 100 mJ
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
- Series: SuperFREDmesh3?
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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