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  • Manufacturer No:
    STD3NK80Z-1
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4593384
  • Description:
    STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
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Inventory:3000
  • Qty Unit Price price
  • 1 $1.969 $1.969
  • 10 $1.949 $19.49
  • 100 $1.929 $192.9
  • 1000 $1.909 $1909
  • 10000 $1.89 $18900

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  • Manufacturer No:
    STD3NK80Z-1
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STD3NK80Z-1
  • SKU:
    4593384
  • Description:
    STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V

STD3NK80Z-1 Details

STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V

STD3NK80Z-1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Factory Lead Time: 12 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Height: 6.2mm
  • Width: 2.4mm
  • Fall Time (Typ): 40 ns
  • Additional Feature: AVALANCHE RATED
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Power Dissipation: 70W
  • Turn-Off Delay Time: 36 ns
  • Vgs(th) (Max) @ Id: 4.5V @ 50μA
  • Series: SuperMESH?
  • Current - Continuous Drain (Id) @ 25°C: 2.5A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Drain Current-Max (Abs) (ID): 2.5A
  • Drain to Source Breakdown Voltage: 800V
  • Length: 6.6mm
  • Continuous Drain Current (ID): 1.25A
  • Vgs (Max): ±30V
  • Weight: 4.535924g
  • Turn On Delay Time: 17 ns
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Rise Time: 27 ns
  • Threshold Voltage: 3.75V
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Power Dissipation-Max: 70W Tc
  • Base Part Number: STD3N
  • Rds On (Max) @ Id, Vgs: 4.5 Ω @ 1.25A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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