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2STF2360123
  • Manufacturer No:
    2STF2360
  • Manufacturer:
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4593478
  • Description:
    STMICROELECTRONICS 2STF2360Bipolar (BJT) Single Transistor, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160
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Inventory:2500
  • Qty Unit Price price
  • 1 $0.232 $0.232
  • 10 $0.229 $2.29
  • 100 $0.226 $22.6
  • 1000 $0.223 $223
  • 10000 $0.22 $2200

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2STF2360
  • Manufacturer No:
    2STF2360
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    2STF2360
  • SKU:
    4593478
  • Description:
    STMICROELECTRONICS 2STF2360Bipolar (BJT) Single Transistor, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160

2STF2360 Details

STMICROELECTRONICS 2STF2360Bipolar (BJT) Single Transistor, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160

2STF2360 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Factory Lead Time: 8 Weeks
  • Number of Pins: 3
  • Current - Collector (Ic) (Max): 3A
  • REACH SVHC: No SVHC
  • Collector Emitter Breakdown Voltage: 60V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Height: 1.6mm
  • Element Configuration: Single
  • Transistor Application: SWITCHING
  • Polarity/Channel Type: PNP
  • Subcategory: Other Transistors
  • hFE Min: 160
  • Max Power Dissipation: 1.4W
  • Current - Collector Cutoff (Max): 100nA ICBO
  • Package / Case: TO-243AA
  • Frequency: 130MHz
  • Gain Bandwidth Product: 130MHz
  • Collector Base Voltage (VCBO): -60V
  • Collector Emitter Saturation Voltage: -300mV
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A 2V
  • Base Part Number: 2STF23
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Max Breakdown Voltage: 60V
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Terminal Form: FLAT
  • Transistor Type: PNP
  • Operating Temperature: 150°C TJ
  • Width: 2.6mm
  • Length: 4.6mm
  • Power Dissipation: 1.4W
  • Case Connection: COLLECTOR
  • Emitter Base Voltage (VEBO): -6V
  • Transition Frequency: 130MHz
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Collector Emitter Voltage (VCEO): -60V
  • Max Collector Current: -3A
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 3A

STMicroelectronics — Manufacturer Introduction

STMicroelectronics
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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