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- Manufacturer No：STB6NK60Z-1
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB6NK60Z-1
- SKU：4593631
- Description：MOSFET N-CH 600V 6A I2PAK
User Guide
User Guide
STB6NK60Z-1 Details
MOSFET N-CH 600V 6A I2PAK
STB6NK60Z-1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 24A
- Turn On Delay Time: 14 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Power Dissipation: 110W
- Turn-Off Delay Time: 47 ns
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Vgs(th) (Max) @ Id: 4.5V @ 100μA
- Avalanche Energy Rating (Eas): 210 mJ
- Base Part Number: STB6N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Part Status: Not For New Designs
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Subcategory: FET General Purpose Power
- Resistance: 1.2Ohm
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Fall Time (Typ): 19 ns
- Rise Time: 14ns
- Power Dissipation-Max: 110W Tc
- Series: SuperMESH?
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Rds On (Max) @ Id, Vgs: 1.2 Ω @ 3A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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