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- Manufacturer No：STD8N80K5
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD8N80K5
- SKU：4593859
- Description：MOSFET N CH 800V 6A DPAK
User Guide
User Guide
STD8N80K5 Details
MOSFET N CH 800V 6A DPAK
STD8N80K5 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ): 20 ns
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Vgs (Max): ±30V
- Rise Time: 14 ns
- Power Dissipation: 110W
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Resistance: 950mOhm
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Base Part Number: STD8N
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Drain to Source Breakdown Voltage: 800V
- Case Connection: DRAIN
- Length: 6.6mm
- Width: 6.2mm
- Height: 2.4mm
- Pulsed Drain Current-Max (IDM): 24A
- Turn On Delay Time: 12 ns
- Turn-Off Delay Time: 32 ns
- Power Dissipation-Max: 110W Tc
- Vgs(th) (Max) @ Id: 5V @ 100μA
- Series: SuperMESH5?
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
- Rds On (Max) @ Id, Vgs: 950m Ω @ 3A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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