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  • Manufacturer No:
    STGW30NC60VD
  • Manufacturer:
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4594268
  • Description:
    PowerMESH™ Tube Through Hole N-CHANNEL IGBT Transistor 2.5V @ 15V 20A 150A 250W 44ns
  • Quantity:
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Inventory:79
  • Qty Unit Price price
  • 1 $383.267 $383.267
  • 10 $379.472 $3794.72
  • 100 $375.714 $37571.4
  • 1000 $371.994 $371994
  • 10000 $368.31 $3683100

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  • Manufacturer No:
    STGW30NC60VD
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - IGBTs - Single
  • Datasheet:
    STGW30NC60VD
  • SKU:
    4594268
  • Description:
    PowerMESH™ Tube Through Hole N-CHANNEL IGBT Transistor 2.5V @ 15V 20A 150A 250W 44ns

STGW30NC60VD Details

PowerMESH™ Tube Through Hole N-CHANNEL IGBT Transistor 2.5V @ 15V 20A 150A 250W 44ns

STGW30NC60VD Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Factory Lead Time: 8 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Transistor Element Material: SILICON
  • Input Type: Standard
  • Collector Emitter Voltage (VCEO): 600V
  • Operating Temperature: -55°C~150°C TJ
  • Current - Collector Pulsed (Icm): 150A
  • Max Power Dissipation: 250W
  • Package / Case: TO-247-3
  • Subcategory: Insulated Gate BIP Transistors
  • Rise Time: 11ns
  • Width: 5.15mm
  • Series: PowerMESH?
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Base Part Number: STGW30
  • Switching Energy: 220μJ (on), 330μJ (off)
  • Test Condition: 390V, 20A, 3.3 Ω, 15V
  • Height: 21.07mm
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Packaging: Tube
  • Number of Pins: 3
  • Collector Emitter Saturation Voltage: 2.5V
  • Element Configuration: Single
  • Collector Emitter Breakdown Voltage: 600V
  • Gate-Emitter Voltage-Max: 20V
  • Polarity/Channel Type: N-CHANNEL
  • Max Collector Current: 80A
  • Power Dissipation: 250W
  • Transistor Application: POWER CONTROL
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Gate-Emitter Thr Voltage-Max: 5.75V
  • Turn Off Time-Nom (toff): 280 ns
  • Gate Charge: 100nC
  • Reverse Recovery Time: 44ns
  • Turn On Time: 42.5 ns
  • Td (on/off) @ 25°C: 31ns/100ns
  • Length: 16.02mm

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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