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- Manufacturer No：STD16N60M2
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD16N60M2
- SKU：4594613
- Description：MOSFET N-CH 600V 12A DPAK
User Guide
User Guide
STD16N60M2 Details
MOSFET N-CH 600V 12A DPAK
STD16N60M2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 3
- Gate to Source Voltage (Vgs): 25V
- Element Configuration: Single
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: 150°C TJ
- Length: 6.6mm
- Width: 6.2mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C: 12A Tc
- Turn-Off Delay Time: 58 ns
- Series: MDmesh? M2
- Rds On (Max) @ Id, Vgs: 320m Ω @ 6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Factory Lead Time: 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- FET Type: N-Channel
- Continuous Drain Current (ID): 12A
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Height: 2.4mm
- Vgs (Max): ±25V
- Turn On Delay Time: 10.5 ns
- Power Dissipation-Max: 110W Tc
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
- Base Part Number: STD16
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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