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- Manufacturer No：STP25NM60ND
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP25NM60ND
- SKU：4595367
- Description：FDmesh™ II Tube Through Hole N-Channel Mosfet Transistor 21A Tc 21A 160W 40ns
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User Guide
STP25NM60ND Details
FDmesh™ II Tube Through Hole N-Channel Mosfet Transistor 21A Tc 21A 160W 40ns
STP25NM60ND Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 50 ns
- Length: 10.4mm
- Turn On Delay Time: 60 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Height: 15.75mm
- Vgs (Max): ±25V
- Pulsed Drain Current-Max (IDM): 84A
- Current - Continuous Drain (Id) @ 25°C: 21A Tc
- Series: FDmesh? II
- Rds On (Max) @ Id, Vgs: 160m Ω @ 10.5A, 10V
- Base Part Number: STP25N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 3
- Pin Count: 3
- Gate to Source Voltage (Vgs): 25V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Width: 4.6mm
- Fall Time (Typ): 40 ns
- Resistance: 160mOhm
- Continuous Drain Current (ID): 21A
- Rise Time: 30ns
- Power Dissipation: 160W
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Power Dissipation-Max: 160W Tc
- Avalanche Energy Rating (Eas): 850 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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