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  • Manufacturer No:
    2N7002
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
  • SKU:
    4595494
  • Description:
    STripFET™ Cut Tape (CT) Surface Mount N-Channel Mosfet Transistor 200mA Tc 200mA 350mW 15ns
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  • Manufacturer No:
    2N7002
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    2N7002
  • SKU:
    4595494
  • Description:
    STripFET™ Cut Tape (CT) Surface Mount N-Channel Mosfet Transistor 200mA Tc 200mA 350mW 15ns

2N7002 Details

STripFET™ Cut Tape (CT) Surface Mount N-Channel Mosfet Transistor 200mA Tc 200mA 350mW 15ns

2N7002 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 60V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Packaging: Cut Tape (CT)
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Width: 3.05mm
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Drain Current-Max (Abs) (ID): 0.2A
  • Turn On Delay Time: 5 ns
  • Turn-Off Delay Time: 7 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Additional Feature: LOW THRESHOLD
  • Vgs (Max): ±18V
  • Rds On (Max) @ Id, Vgs: 5 Ω @ 500mA, 10V
  • Current - Continuous Drain (Id) @ 25°C: 200mA Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
  • Base Part Number: 2N70
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Voltage - Rated DC: 60V
  • Dual Supply Voltage: 60V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 18V
  • Height: 1.2mm
  • Continuous Drain Current (ID): 200mA
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Threshold Voltage: 2.1V
  • Fall Time (Typ): 15 ns
  • Rise Time: 15ns
  • Power Dissipation: 350mW
  • Weight: 4.535924g
  • Current Rating: 115mA
  • Series: STripFET?
  • Nominal Vgs: 2.1 V
  • Length: 3.03mm
  • Power Dissipation-Max: 350mW Tc
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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