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  • Manufacturer No:
    STS4DNFS30L
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STS4DNFS30L
  • SKU:
    4595608
  • Description:
    MOSFET N-CH 30V 4A 8-SOIC

STS4DNFS30L Details

MOSFET N-CH 30V 4A 8-SOIC

STS4DNFS30L Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Pins: 8
  • Pin Count: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Power Dissipation: 2W
  • Voltage - Rated DC: 30V
  • Length: 6.35mm
  • Width: 12.7mm
  • Threshold Voltage: 1V
  • Current Rating: 4A
  • Continuous Drain Current (ID): 4A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Rise Time: 100 ns
  • Turn On Delay Time: 11 ns
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
  • Current - Continuous Drain (Id) @ 25°C: 4A Tc
  • Series: STripFET?
  • Power Dissipation-Max: 2W Tc
  • Base Part Number: STS4D
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • JESD-609 Code: e4
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • REACH SVHC: No SVHC
  • Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 16V
  • Drain to Source Breakdown Voltage: 30V
  • Height: 6.35mm
  • Operating Temperature: -55°C~150°C TJ
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Drain Current-Max (Abs) (ID): 4A
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Turn-Off Delay Time: 25 ns
  • Weight: 4.535924g
  • Fall Time (Typ): 22 ns
  • Vgs (Max): ±16V
  • Resistance: 56mOhm
  • FET Feature: Schottky Diode (Isolated)
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
  • Rds On (Max) @ Id, Vgs: 55m Ω @ 2A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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