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- Manufacturer No：STB141NF55-1
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB141NF55-1
- SKU：4596875
- Description：MOSFET N-CH 55V 80A I2PAK
User Guide
User Guide
STB141NF55-1 Details
MOSFET N-CH 55V 80A I2PAK
STB141NF55-1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Reach Compliance Code: not_compliant
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Breakdown Voltage: 55V
- Case Connection: DRAIN
- Continuous Drain Current (ID): 80A
- Fall Time (Typ): 45 ns
- Rise Time: 150ns
- Power Dissipation-Max: 300W Tc
- Pulsed Drain Current-Max (IDM): 320A
- Series: STripFET? II
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V
- Resistance: -6.5mOhm
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- JESD-30 Code: R-PSIP-T3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Turn-Off Delay Time: 125 ns
- Avalanche Energy Rating (Eas): 1300 mJ
- Rds On (Max) @ Id, Vgs: 8m Ω @ 40A, 10V
- Base Part Number: STB141N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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