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- Manufacturer No：STP110N8F6
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP110N8F6
- SKU：4599440
- Description：Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3
User Guide
User Guide
STP110N8F6 Details
Single N-Channel 80 V 200 W 150 nC Silicon Through Hole Mosfet - TO-220-3
STP110N8F6 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Transistor Element Material: SILICON
- Factory Lead Time: 20 Weeks
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Voltage (Vdss): 80V
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code: TO-220AB
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 110A Tc
- Avalanche Energy Rating (Eas): 180 mJ
- Base Part Number: STP110
- Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- DS Breakdown Voltage-Min: 80V
- Package / Case: TO-220-3
- Case Connection: DRAIN
- JESD-30 Code: R-PSFM-T3
- Continuous Drain Current (ID): 110A
- Power Dissipation-Max: 200W Tc
- Pulsed Drain Current-Max (IDM): 440A
- Drain-source On Resistance-Max: 0.0065Ohm
- Series: STripFET? F6
- Rds On (Max) @ Id, Vgs: 6.5m Ω @ 55A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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