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  • Manufacturer No:
    STF25NM60ND
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4600776
  • Description:
    STMICROELECTRONICS STF25NM60ND Power MOSFET, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
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  • Manufacturer No:
    STF25NM60ND
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STF25NM60ND
  • SKU:
    4600776
  • Description:
    STMICROELECTRONICS STF25NM60ND Power MOSFET, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STF25NM60ND Details

STMICROELECTRONICS STF25NM60ND Power MOSFET, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STF25NM60ND Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Case Connection: ISOLATED
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Temperature: 150°C TJ
  • JEDEC-95 Code: TO-220AB
  • Turn-Off Delay Time: 50 ns
  • Length: 10.4mm
  • Turn On Delay Time: 60 ns
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Rise Time: 30ns
  • Height: 16.4mm
  • Power Dissipation-Max: 40W Tc
  • Current - Continuous Drain (Id) @ 25°C: 21A Tc
  • Avalanche Energy Rating (Eas): 850 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 600V
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Power Dissipation: 40W
  • Width: 4.6mm
  • Fall Time (Typ): 40 ns
  • Package / Case: TO-220-3 Full Pack
  • Continuous Drain Current (ID): 21A
  • Vgs (Max): ±25V
  • Pulsed Drain Current-Max (IDM): 84A
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Series: FDmesh? II
  • Rds On (Max) @ Id, Vgs: 160m Ω @ 10.5A, 10V
  • Base Part Number: STF25

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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