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- Manufacturer No：STF10N80K5
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STF10N80K5
- SKU：4602253
- Description：MOSFET N-CH 800V 9A TO-220FP
User Guide
User Guide
STF10N80K5 Details
MOSFET N-CH 800V 9A TO-220FP
STF10N80K5 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Factory Lead Time: 17 Weeks
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Subcategory: FET General Purpose Power
- Continuous Drain Current (ID): 9A
- Vgs (Max): ±30V
- Fall Time (Typ): 14 ns
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Rise Time: 11ns
- Current - Continuous Drain (Id) @ 25°C: 9A Tc
- Weight: 329.988449mg
- Series: MDmesh?
- Rds On (Max) @ Id, Vgs: 600m Ω @ 4.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Channels: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Drain to Source Breakdown Voltage: 800V
- Drain Current-Max (Abs) (ID): 9A
- Turn-Off Delay Time: 35 ns
- Package / Case: TO-220-3 Full Pack
- Resistance: 470mOhm
- Turn On Delay Time: 14.5 ns
- Power Dissipation-Max: 30W Tc
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Vgs(th) (Max) @ Id: 5V @ 100μA
- Base Part Number: STF10N
- Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 100V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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