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- Manufacturer No：2SA1312-BL(TE85L,F
- Manufacturer：Toshiba
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2SA1312-BL(TE85L,F
- SKU：4889313
- Description：Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
User Guide
User Guide
2SA1312-BL(TE85L,F Details
Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
2SA1312-BL(TE85L,F Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 16 Weeks
- Element Configuration: Single
- Frequency: 100MHz
- Length: 2.9mm
- Collector Emitter Breakdown Voltage: 120V
- Height: 1.1mm
- Width: 1.5mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Power Dissipation: 150mW
- Contact Plating: Copper, Silver, Tin
- Current - Collector Cutoff (Max): 100nA ICBO
- Collector Emitter Saturation Voltage: -300mV
- Collector Base Voltage (VCBO): -120V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- Number of Pins: 3
- Published: 2009
- Max Collector Current: 100mA
- Gain Bandwidth Product: 100MHz
- Packaging: Cut Tape (CT)
- Max Breakdown Voltage: 120V
- hFE Min: 200
- Emitter Base Voltage (VEBO): -5V
- Max Power Dissipation: 150mW
- Transistor Type: PNP
- Collector Emitter Voltage (VCEO): 300mV
- Operating Temperature: 125°C TJ
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA 6V
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Toshiba — Manufacturer Introduction
Toshiba is a world leader and innovator in pioneering high technology, a diversified manufacturer and marketer of advanced electronic and electrical products spanning information & communications systems; digital consumer products; electronic devices and components; power systems, including nuclear energy; industrial and social infrastructure systems; and home appliances. Toshiba was founded in 1875, and today operates a global network of more than 740 companies, with 204,000 employees worldwide and annual sales surpassing 6.3 trillion yen (US$68 billion).
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