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  • Manufacturer No:
    CSD17313Q2
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    540346
  • Description:
    TEXAS INSTRUMENTS - CSD17313Q2 - MOSFET Transistor, N Channel, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
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Inventory:25250
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  • 1000 $0.85 $850
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  • Manufacturer No:
    CSD17313Q2
  • Manufacturer:
    Texas Instruments
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    CSD17313Q2
  • SKU:
    540346
  • Description:
    TEXAS INSTRUMENTS - CSD17313Q2 - MOSFET Transistor, N Channel, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

CSD17313Q2 Details

TEXAS INSTRUMENTS - CSD17313Q2 - MOSFET Transistor, N Channel, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

CSD17313Q2 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Pin Count: 8
  • Factory Lead Time: 6 Weeks
  • Number of Pins: 6
  • Peak Reflow Temperature (Cel): 260
  • Length: 2mm
  • Drain Current-Max (Abs) (ID): 5A
  • Gate to Source Voltage (Vgs): 10V
  • Element Configuration: Single
  • Height: 800μm
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Case Connection: DRAIN
  • Thickness: 750μm
  • Power Dissipation: 2.3W
  • Subcategory: FET General Purpose Powers
  • Turn On Delay Time: 2.8 ns
  • Fall Time (Typ): 1.3 ns
  • Vgs(th) (Max) @ Id: 1.8V @ 250μA
  • Drive Voltage (Max Rds On,Min Rds On): 3V 8V
  • Power Dissipation-Max: 2.3W Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • Base Part Number: CSD17313
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e4
  • Terminal Position: DUAL
  • Number of Terminations: 6
  • REACH SVHC: No SVHC
  • Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
  • Width: 2mm
  • Continuous Drain Current (ID): 5A
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 30V
  • Pulsed Drain Current-Max (IDM): 20A
  • FET Type: N-Channel
  • Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
  • Operating Mode: ENHANCEMENT MODE
  • Threshold Voltage: 1.3V
  • Package / Case: 6-WDFN Exposed Pad
  • Turn-Off Delay Time: 4.2 ns
  • Rise Time: 3.9 ns
  • Series: NexFET?
  • Current - Continuous Drain (Id) @ 25°C: 5A Tc
  • Drain-source On Resistance-Max: 0.042Ohm
  • Vgs (Max): +10V, -8V
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 30m Ω @ 4A, 8V

Texas Instruments — Manufacturer Introduction

Texas Instruments (TI) is a multinational semiconductor company based in Texas, United States. It is renowned for its development, manufacturing, and sale of semiconductors and computer technology, primarily focusing on innovative digital signal processing and analog circuitry. In addition to its semiconductor business, TI also offers solutions in sensing and control, educational products, and digital light processing. Headquartered in Dallas, Texas, TI has manufacturing, design, and sales offices in more than 25 countries. It is the world's largest manufacturer of digital signal processors (DSPs) and analog circuit components, with its analog and digital signal processing technologies holding a dominant position worldwide. After successive acquisitions of Fairchild Semiconductor's manufacturing division and Chengdu Cension Semiconductor, in 2011, TI further solidified its position as a leading analog semiconductor giant by acquiring National Semiconductor for $6.5 billion.

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