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- Manufacturer No：CSD19536KTT
- Manufacturer：Texas Instruments
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：CSD19536KTT
- SKU：546002
- Description：CSD19536KTT 100 V N-Channel NexFET? Power MOSFET 3-DDPAK/TO-263
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User Guide
CSD19536KTT Details
CSD19536KTT 100 V N-Channel NexFET? Power MOSFET 3-DDPAK/TO-263
CSD19536KTT Specification Parameters
- Part Status: Active
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 3
- Terminal Form: GULL WING
- Drain to Source Breakdown Voltage: 100V
- Max Junction Temperature (Tj): 175°C
- Element Configuration: Single
- Moisture Sensitivity Level (MSL): 2 (1 Year)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
- Continuous Drain Current (ID): 200A
- Pulsed Drain Current-Max (IDM): 400A
- Additional Feature: AVALANCHE RATED
- Turn-Off Delay Time: 32 ns
- Thickness: 4.44mm
- Series: NexFET?
- Width: 8.41mm
- Power Dissipation-Max: 375W Tc
- Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
- Rds On (Max) @ Id, Vgs: 2.4m Ω @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V
- Base Part Number: CSD19536
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Contact Plating: Tin
- Factory Lead Time: 6 Weeks
- Lead Free: Contains Lead
- Peak Reflow Temperature (Cel): 260
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Height: 4.83mm
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Rise Time: 8ns
- Fall Time (Typ): 6 ns
- Turn On Delay Time: 13 ns
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Power Dissipation: 375W
- Length: 10.18mm
- Drain-source On Resistance-Max: 0.0028Ohm
- Vgs(th) (Max) @ Id: 3.2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 200A Ta
- Avalanche Energy Rating (Eas): 806 mJ
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Texas Instruments — Manufacturer Introduction
Texas Instruments (TI) is a multinational semiconductor company based in Texas, United States. It is renowned for its development, manufacturing, and sale of semiconductors and computer technology, primarily focusing on innovative digital signal processing and analog circuitry. In addition to its semiconductor business, TI also offers solutions in sensing and control, educational products, and digital light processing.
Headquartered in Dallas, Texas, TI has manufacturing, design, and sales offices in more than 25 countries. It is the world's largest manufacturer of digital signal processors (DSPs) and analog circuit components, with its analog and digital signal processing technologies holding a dominant position worldwide.
After successive acquisitions of Fairchild Semiconductor's manufacturing division and Chengdu Cension Semiconductor, in 2011, TI further solidified its position as a leading analog semiconductor giant by acquiring National Semiconductor for $6.5 billion.
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