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- Manufacturer No：JANTXV2N6798
- Manufacturer：Microsemi Corporation
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：JANTXV2N6798
- SKU：5535005
- Description：MOSFET N-CH
User Guide
User Guide
JANTXV2N6798 Details
MOSFET N-CH
JANTXV2N6798 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 3
- Pbfree Code: no
- Drain to Source Voltage (Vdss): 200V
- Terminal Form: WIRE
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- HTS Code: 8541.21.00.95
- Current - Continuous Drain (Id) @ 25°C: 5.5A Tc
- Package / Case: TO-205AF Metal Can
- Series: Military, MIL-PRF-19500/557
- Rds On (Max) @ Id, Vgs: 420m Ω @ 5.5A, 10V
- Packaging: Bulk
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Pins: 3
- JESD-609 Code: e0
- DS Breakdown Voltage-Min: 200V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Transistor Element Material: SILICON
- Terminal Position: BOTTOM
- FET Type: N-Channel
- Published: 1997
- Operating Mode: ENHANCEMENT MODE
- Additional Feature: HIGH RELIABILITY
- Case Connection: DRAIN
- Qualification Status: Qualified
- Continuous Drain Current (ID): 5.5A
- Reference Standard: MIL-19500
- Drain-source On Resistance-Max: 0.42Ohm
- Power Dissipation-Max: 800mW Ta 25W Tc
- Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
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Microsemi Corporation — Manufacturer Introduction
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
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