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- Manufacturer No：JANTX2N6788
- Manufacturer：Microsemi Corporation
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：JANTX2N6788
- SKU：5544986
- Description：MOSFET N-CH TO-205AF TO-39
User Guide
User Guide
JANTX2N6788 Details
MOSFET N-CH TO-205AF TO-39
JANTX2N6788 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 3
- JESD-609 Code: e0
- DS Breakdown Voltage-Min: 100V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Qualification Status: Qualified
- Pulsed Drain Current-Max (IDM): 24A
- Subcategory: FET General Purpose Powers
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Additional Feature: RADIATION HARDENED
- Series: Military, MIL-PRF-19500/555
- Packaging: Bulk
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 100V
- Terminal Form: WIRE
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Configuration: Single
- Terminal Position: BOTTOM
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Published: 1997
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Rise Time: 70ns
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Package / Case: TO-205AF Metal Can
- Power Dissipation-Max: 800mW Tc
- Rds On (Max) @ Id, Vgs: 350m Ω @ 6A, 10V
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Microsemi Corporation — Manufacturer Introduction
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
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