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- Manufacturer No：JANTX2N6766
- Manufacturer：Microsemi Corporation
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：JANTX2N6766
- SKU：5547052
- Description：Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE
User Guide
User Guide
JANTX2N6766 Details
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE
JANTX2N6766 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Pin Count: 2
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Lead Free: Contains Lead
- Contact Plating: Lead, Tin
- DS Breakdown Voltage-Min: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Form: PIN/PEG
- Terminal Position: BOTTOM
- FET Type: N-Channel
- Published: 1997
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Power Dissipation: 4W
- Vgs(th) (Max) @ Id: 4V @ 250μA
- JESD-30 Code: O-MBFM-P2
- Drain-source On Resistance-Max: 0.065Ohm
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Series: Military, MIL-PRF-19500/543
- Number of Terminations: 2
- Packaging: Bulk
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- JESD-609 Code: e0
- Drain to Source Voltage (Vdss): 200V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 30A
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Qualification Status: Qualified
- Subcategory: FET General Purpose Powers
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Package / Case: TO-204AE
- Power Dissipation-Max: 4W Ta 150W Tc
- Rds On (Max) @ Id, Vgs: 90m Ω @ 30A, 10V
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Microsemi Corporation — Manufacturer Introduction
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.
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