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- Manufacturer No：MJ10012
- Manufacturer：NTE Electronics, Inc
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：MJ10012
- SKU：5551562
- Description：Bipolar (BJT) Transistor NPN - Darlington 400 V 10 A - 175 W Through Hole TO-3
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User Guide
MJ10012 Details
Bipolar (BJT) Transistor NPN - Darlington 400 V 10 A - 175 W Through Hole TO-3
MJ10012 Specification Parameters
- Part Status: Active
- Frequency - Transition: -
- Package: Bag
- Mfr: NTE Electronics, Inc
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Operating Temperature: -65°C ~ 200°C (TJ)
- Supplier Device Package: TO-3
- Power - Max: 175 W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 3A, 6V
- Series: -
- Mounting Type: Through Hole
- Current - Collector Cutoff (Max): 1mA
- Category: Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max): 10 A
- Transistor Type: NPN - Darlington
- Package / Case: TO-204AA, TO-3
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
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