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- Manufacturer No：MJ11033
- Manufacturer：NTE Electronics, Inc
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：MJ11033
- SKU：5552655
- Description：Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A - 300 W Through Hole TO-3
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User Guide
MJ11033 Details
Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A - 300 W Through Hole TO-3
MJ11033 Specification Parameters
- Part Status: Active
- Operating Temperature: -
- Mounting Type: Through Hole
- Current - Collector Cutoff (Max): 2mA
- Category: Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max): 50 A
- Transistor Type: PNP - Darlington
- Package / Case: TO-204AE
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 250mA, 25A
- Series: -
- Frequency - Transition: -
- Package: Bag
- Mfr: NTE Electronics, Inc
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Supplier Device Package: TO-3
- Power - Max: 300 W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
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