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- Manufacturer No：NTE128
- Manufacturer：NTE Electronics, Inc
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：NTE128
- SKU：5558635
- Description：Bipolar (BJT) Transistor NPN 80 V 1 A 400MHz 800 mW Through Hole TO-39
User Guide
User Guide
NTE128 Details
Bipolar (BJT) Transistor NPN 80 V 1 A 400MHz 800 mW Through Hole TO-39
NTE128 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Transistor Type: NPN
- Frequency - Transition: 400MHz
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Power - Max: 800 mW
- Supplier Device Package: TO-39
- Current - Collector Cutoff (Max): 10nA (ICBO)
- Series: -
- Package: Bag
- Mfr: NTE Electronics, Inc
- Category: Discrete Semiconductor Products/Transistors - Bipolar (BJT) - Single
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
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