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  • Manufacturer No:
    BC856BT115
  • Manufacturer:
    NXP USA Inc.
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
  • SKU:
    5781239
  • Description:
    Bipolar (BJT) Transistor
  • Quantity:
      • RFQ
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  • Material flow:
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Inventory:248666
  • Qty Unit Price price
  • 1 $0.028 $0.028
  • 10 $0.027 $0.27
  • 100 $0.026 $2.6
  • 1000 $0.025 $25
  • 10000 $0.024 $240

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  • Manufacturer No:
    BC856BT115
  • Manufacturer:
    NXP USA Inc.
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    BC856BT115
  • SKU:
    5781239
  • Description:
    Bipolar (BJT) Transistor

BC856BT115 Details

Bipolar (BJT) Transistor

BC856BT115 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Surface Mount: YES
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Published: 2009
  • Transistor Element Material: SILICON
  • Current - Collector (Ic) (Max): 100mA
  • Frequency - Transition: 100MHz
  • Series: Automotive, AEC-Q101
  • Transistor Type: PNP
  • Operating Temperature: 150°C TJ
  • Subcategory: Other Transistors
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Package / Case: SC-75, SOT-416
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA 5V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 40
  • Terminal Finish: Tin (Sn)
  • Configuration: Single
  • Transition Frequency: 100MHz
  • Transistor Application: SWITCHING
  • Power - Max: 150mW
  • Polarity/Channel Type: PNP
  • Power Dissipation-Max (Abs): 0.15W
  • JESD-30 Code: R-PDSO-G3
  • Current - Collector Cutoff (Max): 15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
  • Base Part Number: BC856

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