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  • Manufacturer No:
    CSD16301Q2
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    784674
  • Description:
    TEXAS INSTRUMENTS - CSD16301Q2 - Power MOSFET, N Channel, 25 V, 5 A, 0.019 ohm, SON, Surface Mount
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  • Manufacturer No:
    CSD16301Q2
  • Manufacturer:
    Texas Instruments
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    CSD16301Q2
  • SKU:
    784674
  • Description:
    TEXAS INSTRUMENTS - CSD16301Q2 - Power MOSFET, N Channel, 25 V, 5 A, 0.019 ohm, SON, Surface Mount

CSD16301Q2 Details

TEXAS INSTRUMENTS - CSD16301Q2 - Power MOSFET, N Channel, 25 V, 5 A, 0.019 ohm, SON, Surface Mount

CSD16301Q2 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Terminal Position: DUAL
  • Number of Terminations: 6
  • Pin Count: 6
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Width: 2mm
  • Drain Current-Max (Abs) (ID): 5A
  • Gate to Source Voltage (Vgs): 10V
  • Element Configuration: Single
  • Pulsed Drain Current-Max (IDM): 20A
  • Threshold Voltage: 1.2V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Case Connection: DRAIN
  • Thickness: 750μm
  • Power Dissipation: 2.3W
  • Rise Time: 4.4 ns
  • Fall Time (Typ): 1.7 ns
  • Current - Continuous Drain (Id) @ 25°C: 5A Tc
  • Drain-source On Resistance-Max: 0.034Ohm
  • Vgs (Max): +10V, -8V
  • Power Dissipation-Max: 2.3W Ta
  • Rds On (Max) @ Id, Vgs: 24m Ω @ 4A, 8V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • JESD-609 Code: e4
  • Factory Lead Time: 6 Weeks
  • Number of Pins: 6
  • REACH SVHC: No SVHC
  • Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
  • Length: 2mm
  • Drain to Source Breakdown Voltage: 25V
  • Continuous Drain Current (ID): 5A
  • Transistor Element Material: SILICON
  • Height: 800μm
  • Operating Temperature: -55°C~150°C TJ
  • Lifecycle Status: ACTIVE (Last Updated: 3 days ago)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Package / Case: 6-SMD, Flat Leads
  • Turn On Delay Time: 2.7 ns
  • Turn-Off Delay Time: 4.1 ns
  • Series: NexFET?
  • Nominal Vgs: 1.2 V
  • Drive Voltage (Max Rds On,Min Rds On): 3V 8V
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Vgs(th) (Max) @ Id: 1.55V @ 250μA

Texas Instruments — Manufacturer Introduction

Texas Instruments (TI) is a multinational semiconductor company based in Texas, United States. It is renowned for its development, manufacturing, and sale of semiconductors and computer technology, primarily focusing on innovative digital signal processing and analog circuitry. In addition to its semiconductor business, TI also offers solutions in sensing and control, educational products, and digital light processing. Headquartered in Dallas, Texas, TI has manufacturing, design, and sales offices in more than 25 countries. It is the world's largest manufacturer of digital signal processors (DSPs) and analog circuit components, with its analog and digital signal processing technologies holding a dominant position worldwide. After successive acquisitions of Fairchild Semiconductor's manufacturing division and Chengdu Cension Semiconductor, in 2011, TI further solidified its position as a leading analog semiconductor giant by acquiring National Semiconductor for $6.5 billion.

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