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- Manufacturer No：2N2907A
- Manufacturer：MICROSS/On Semiconductor
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2N2907A
- SKU：8837716
- Description：Tray Through Hole 1 Contains Lead Bipolar (BJT) Transistor -600mA 500mW 60V 200C
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User Guide
2N2907A Details
Tray Through Hole 1 Contains Lead Bipolar (BJT) Transistor -600mA 500mW 60V 200C
2N2907A Specification Parameters
- Part Status: Active
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tray
- Lead Free: Contains Lead
- Collector Base Voltage (VCBO): 60V
- Min Operating Temperature: -65°C
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Power Dissipation: 500mW
- Max Operating Temperature: 200°C
- Polarity: PNP
- Package / Case: TO-18
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- Contact Plating: Lead, Tin
- Voltage: 60V
- Factory Lead Time: 4 Weeks
- Max Power Dissipation: 500mW
- Collector Emitter Voltage (VCEO): 40V
- Max Collector Current: 600mA
- Voltage - Rated DC: -60V
- Current Rating: -600mA
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