NE3210S01-T1BCEL
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    • Manufacturer No：
      NE3210S01-T1B
    • Manufacturer：
      CEL
    • Category：
      Transistors - FETs, MOSFETs - RF
    • Datasheet：
    • SKU：
      9012884
    • Description：
      RF JFET Transistors Super Lo Noise HJFET
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    • Manufacturer No：
      NE3210S01-T1B
    • Manufacturer：
      CEL
    • Category：
      Transistors - FETs, MOSFETs - RF
    • Datasheet：
      NE3210S01-T1B
    • SKU：
      9012884
    • Description：
      RF JFET Transistors Super Lo Noise HJFET

    User Guide

    User Guide

    NE3210S01-T1B Details

    RF JFET Transistors Super Lo Noise HJFET

    NE3210S01-T1B Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • Number of Pins: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Number of Terminations: 4
    • Qualification Status: Not Qualified
    • Min Operating Temperature: -65°C
    • Voltage - Test: 2V
    • Drain to Source Voltage (Vdss): 4V
    • Current Rating: 15mA
    • Continuous Drain Current (ID): 70mA
    • Terminal Position: RADIAL
    • Package / Case: 4-SMD
    • Frequency: 12GHz
    • Noise Figure: 0.35dB
    • Max Power Dissipation: 165mW
    • Transistor Type: HFET
    • FET Technology: HETERO-JUNCTION
    • Mount: Surface Mount
    • Number of Elements: 1
    • RoHS Status: RoHS Compliant
    • Lead Free: Lead Free
    • Max Operating Temperature: 125°C
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Configuration: Single
    • Current - Test: 10mA
    • Drain to Source Breakdown Voltage: 4V
    • Additional Feature: HIGH RELIABILITY
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: SOURCE
    • Gate to Source Voltage (Vgs): -3V
    • Operating Mode: DEPLETION MODE
    • Power Dissipation: 165mW
    • Gain: 13.5dB
    • JESD-30 Code: O-PRDB-G4
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