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- Manufacturer No：MT47H256M8EB-25E IT:C
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT47H256M8EB-25E IT:C
- SKU：3920389
- Description：EAR99 Surface Mount MT47H256M8 Tray ic memory 400MHz 400ps 9mm 0.012A
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MT47H256M8EB-25E IT:C Details
EAR99 Surface Mount MT47H256M8 Tray ic memory 400MHz 400ps 9mm 0.012A
MT47H256M8EB-25E IT:C Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Power Supplies: 1.8V
- Interleaved Burst Length: 48
- Terminal Position: BOTTOM
- Pin Count: 60
- Memory Interface: Parallel
- JESD-609 Code: e1
- Width: 9mm
- Supply Voltage-Min (Vsup): 1.7V
- I/O Type: COMMON
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Length: 11.5mm
- Terminal Finish: TIN SILVER COPPER
- Supply Current-Max: 0.25mA
- Operating Temperature: -40°C~95°C TC
- Memory Density: 2147483648 bit
- Access Time: 400ps
- Standby Current-Max: 0.012A
- JESD-30 Code: R-PBGA-B60
- Mounting Type: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Memory Width: 8
- Qualification Status: Not Qualified
- Published: 2011
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Part Status: Not For New Designs
- Sequential Burst Length: 48
- Number of Terminations: 60
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Operating Mode: SYNCHRONOUS
- Supply Voltage-Max (Vsup): 1.9V
- Clock Frequency: 400MHz
- Voltage - Supply: 1.7V~1.9V
- Refresh Cycles: 8192
- Additional Feature: AUTO/SELF REFRESH
- Technology: SDRAM - DDR2
- Package / Case: 60-TFBGA
- Memory Size: 2Gb 256M x 8
- HTS Code: 8542.32.00.36
- Organization: 256MX8
- Base Part Number: MT47H256M8
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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