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- Manufacturer No：MT47H32M16CC-37E L:B
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT47H32M16CC-37E L:B
- SKU：3920378
- Description：EAR99 Surface Mount MT47H32M16 Tray ic memory 267MHz 500ps 12mm 0.007A
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MT47H32M16CC-37E L:B Details
EAR99 Surface Mount MT47H32M16 Tray ic memory 267MHz 500ps 12mm 0.007A
MT47H32M16CC-37E L:B Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Power Supplies: 1.8V
- Interleaved Burst Length: 48
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- JESD-609 Code: e1
- Memory Type: Volatile
- Length: 12.5mm
- Number of Terminations: 84
- Operating Mode: SYNCHRONOUS
- Supply Voltage-Max (Vsup): 1.9V
- Write Cycle Time - Word, Page: 15ns
- Refresh Cycles: 8192
- Additional Feature: AUTO/SELF REFRESH
- Memory Size: 512Mb 32M x 16
- Technology: SDRAM - DDR2
- HTS Code: 8542.32.00.28
- Clock Frequency: 267MHz
- JESD-30 Code: R-PBGA-B84
- Access Time: 500ps
- Mounting Type: Surface Mount
- Number of Ports: 1
- Surface Mount: YES
- Packaging: Tray
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Published: 2008
- Sequential Burst Length: 48
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Output Characteristics: 3-STATE
- Width: 12mm
- Supply Voltage-Min (Vsup): 1.7V
- Pin Count: 84
- I/O Type: COMMON
- Memory Format: DRAM
- Voltage - Supply: 1.7V~1.9V
- Terminal Finish: TIN SILVER COPPER
- Memory Density: 536870912 bit
- Operating Temperature: 0°C~85°C TC
- Organization: 32MX16
- Package / Case: 84-TFBGA
- Standby Current-Max: 0.007A
- Supply Current-Max: 0.34mA
- Base Part Number: MT47H32M16
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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