IRFU1N60APBFVishay Siliconix
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    IRFU1N60APBF123
    • Manufacturer No：
      IRFU1N60APBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      234265
    • Description：
      MOSFET N-CH 600V 1.4A I-PAK
    • Quantity：
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    Inventory:1926
    • Qty Unit Price price
    • 1 $250.789 $250.789
    • 10 $248.305 $2483.05
    • 100 $245.846 $24584.6
    • 1000 $243.411 $243411
    • 10000 $241 $2410000

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    IRFU1N60APBF
    • Manufacturer No：
      IRFU1N60APBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFU1N60APBF
    • SKU：
      234265
    • Description：
      MOSFET N-CH 600V 1.4A I-PAK

    User Guide

    User Guide

    IRFU1N60APBF Details

    MOSFET N-CH 600V 1.4A I-PAK

    IRFU1N60APBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Factory Lead Time: 8 Weeks
    • Number of Terminations: 3
    • Pin Count: 3
    • Time@Peak Reflow Temperature-Max (s): 40
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 600V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 1.4A
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Drain-source On Resistance-Max: 7Ohm
    • Rise Time: 14 ns
    • Pulsed Drain Current-Max (IDM): 5.6A
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Turn On Delay Time: 9.8 ns
    • Weight: 329.988449mg
    • Current - Continuous Drain (Id) @ 25°C: 1.4A Tc
    • Rds On (Max) @ Id, Vgs: 7 Ω @ 840mA, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Packaging: Tube
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • REACH SVHC: Unknown
    • Published: 2005
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Threshold Voltage: 4V
    • Operating Mode: ENHANCEMENT MODE
    • Length: 6.73mm
    • Fall Time (Typ): 20 ns
    • Vgs (Max): ±30V
    • Height: 6.22mm
    • Turn-Off Delay Time: 18 ns
    • Power Dissipation: 36W
    • Width: 2.38mm
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
    • Power Dissipation-Max: 36W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V
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