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- Manufacturer No：AO3416L
- Manufacturer：Alpha & Omega Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：AO3416L
- SKU：1474355
- Description：TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
User Guide
User Guide
AO3416L Details
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
AO3416L Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Surface Mount: YES
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- JESD-30 Code: R-PDSO-G3
- Vgs (Max): ±8V
- Drain-source On Resistance-Max: 0.022Ohm
- Current - Continuous Drain (Id) @ 25°C: 6.5A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Published: 2010
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Power Dissipation-Max: 1.4W Ta
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 22m Ω @ 6.5A, 4.5V
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