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- Manufacturer No：AOD442
- Manufacturer：Alpha & Omega Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：AOD442
- SKU：1473244
- Description：MOSFET N-CH 60V 38A TO-252
User Guide
User Guide
AOD442 Details
MOSFET N-CH 60V 38A TO-252
AOD442 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Terminal Form: GULL WING
- DS Breakdown Voltage-Min: 60V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Continuous Drain Current (ID): 37A
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Avalanche Energy Rating (Eas): 45 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
- Current - Continuous Drain (Id) @ 25°C: 7A Ta 37A Tc
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- Published: 2009
- Terminal Position: SINGLE
- Part Status: Not For New Designs
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Pulsed Drain Current-Max (IDM): 60A
- Power Dissipation: 60W
- Drain-source On Resistance-Max: 0.025Ohm
- Vgs(th) (Max) @ Id: 2.7V @ 250μA
- Rds On (Max) @ Id, Vgs: 20m Ω @ 20A, 10V
- Power Dissipation-Max: 2.1W Ta 60W Tc
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