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- Manufacturer No：AOI4S60
- Manufacturer：Alpha & Omega Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：AOI4S60
- SKU：1476040
- Description：MOSFET N-CH 600V 4A TO251A
User Guide
User Guide
AOI4S60 Details
MOSFET N-CH 600V 4A TO251A
AOI4S60 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Factory Lead Time: 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Terminal Position: SINGLE
- Part Status: Not For New Designs
- Drain Current-Max (Abs) (ID): 4A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C: 4A Tc
- Drain-source On Resistance-Max: 0.9Ohm
- Series: aMOS?
- Vgs(th) (Max) @ Id: 4.1V @ 250μA
- Power Dissipation: 56.8W
- Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Published: 2011
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 600V
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 4A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±30V
- Package / Case: TO-251-3 Stub Leads, IPak
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Avalanche Energy Rating (Eas): 77 mJ
- Power Dissipation-Max: 56.8W Tc
- Rds On (Max) @ Id, Vgs: 900m Ω @ 2A, 10V
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