AT-41535GBroadcom Limited
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    AT-41535G123
    • Manufacturer No：
      AT-41535G
    • Manufacturer：
      Broadcom Limited
    • Category：
      Transistors - Bipolar (BJT) - RF
    • Datasheet：
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    • SKU：
      2029519
    • Description：
      Trans GP BJT NPN 12V 0.06A 4-Pin Case 35 Micro-X
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    AT-41535G
    • Manufacturer No：
      AT-41535G
    • Manufacturer：
      Broadcom Limited
    • Category：
      Transistors - Bipolar (BJT) - RF
    • Datasheet：
      AT-41535G
    • SKU：
      2029519
    • Description：
      Trans GP BJT NPN 12V 0.06A 4-Pin Case 35 Micro-X

    User Guide

    User Guide

    AT-41535G Details

    Trans GP BJT NPN 12V 0.06A 4-Pin Case 35 Micro-X

    AT-41535G Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • RoHS Status: RoHS Compliant
    • Surface Mount: YES
    • Part Status: Obsolete
    • Number of Terminations: 4
    • Peak Reflow Temperature (Cel): 260
    • Voltage - Collector Emitter Breakdown (Max): 12V
    • Power - Max: 500mW
    • Configuration: Single
    • Terminal Form: FLAT
    • Polarity/Channel Type: NPN
    • Additional Feature: HIGH RELIABILITY
    • Transistor Application: AMPLIFIER
    • HTS Code: 8541.21.00.75
    • Highest Frequency Band: S B
    • Gain: 10dB ~ 18dB
    • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 4GHz
    • Packaging: Bulk
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2008
    • Transistor Element Material: SILICON
    • Reach Compliance Code: compliant
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 60mA
    • Operating Temperature: 150°C TJ
    • Terminal Position: RADIAL
    • Frequency - Transition: 8GHz
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA 8V
    • Package / Case: 4-SMD (35 micro-X)
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