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- Manufacturer No：2N3810
- Manufacturer：Central Semiconductor Corp
- Category：Transistors - Bipolar (BJT) - Arrays
- Datasheet：2N3810
- SKU：2012528
- Description：Bulk Through Hole PNP SEPARATE 2ELEMENTS Bipolar (BJT) Transistor Array 150 @ 1mA 5V 50mA 600mW 100MHz
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User Guide
2N3810 Details
Bulk Through Hole PNP SEPARATE 2ELEMENTS Bipolar (BJT) Transistor Array 150 @ 1mA 5V 50mA 600mW 100MHz
2N3810 Specification Parameters
- Surface Mount: NO
- Number of Elements: 2
- Mounting Type: Through Hole
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pbfree Code: no
- Number of Terminations: 6
- JESD-609 Code: e0
- Terminal Form: WIRE
- Terminal Finish: Tin/Lead (Sn/Pb)
- Terminal Position: BOTTOM
- Frequency - Transition: 100MHz
- Published: 1999
- Power - Max: 600mW
- Transistor Application: AMPLIFIER
- Additional Feature: LOW NOISE
- Configuration: SEPARATE, 2 ELEMENTS
- Transistor Type: 2 PNP (Dual)
- JESD-30 Code: O-MBCY-W6
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100μA
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Bulk
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Qualification Status: Not Qualified
- Pin Count: 6
- Voltage - Collector Emitter Breakdown (Max): 60V
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Transition Frequency: 100MHz
- Current - Collector (Ic) (Max): 50mA
- Polarity/Channel Type: PNP
- Subcategory: Other Transistors
- HTS Code: 8541.21.00.95
- Operating Temperature: -65°C~200°C TJ
- Current - Collector Cutoff (Max): 10nA ICBO
- Package / Case: TO-78-6 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA 5V
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