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- Manufacturer No：TIP147
- Manufacturer：Central Semiconductor Corp
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：TIP147
- SKU：2056062
- Description：Bulk Through Hole PNP Single Bipolar (BJT) Transistor 1000 @ 5A 4V 10A 125W 100V
User Guide
User Guide
TIP147 Details
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 1000 @ 5A 4V 10A 125W 100V
TIP147 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Emitter Base Voltage (VEBO): 5V
- Pbfree Code: no
- JESD-609 Code: e0
- Collector Emitter Breakdown Voltage: 100V
- Collector Emitter Voltage (VCEO): 100V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Element Configuration: Single
- Continuous Collector Current: 10A
- Transistor Type: PNP
- Subcategory: Other Transistors
- JESD-30 Code: R-PSFM-T3
- Case Connection: COLLECTOR
- Power Dissipation: 125W
- Package / Case: TO-218-3
- Packaging: Bulk
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Published: 2012
- Collector Base Voltage (VCBO): 100V
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Max Collector Current: 10A
- Operating Temperature: -65°C~150°C TJ
- Polarity/Channel Type: PNP
- hFE Min: 1000
- Transistor Application: AMPLIFIER
- HTS Code: 8541.29.00.95
- Max Power Dissipation: 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A 4V
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