CY7C1021DV33-10BVXICypress Semiconductor
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    CY7C1021DV33-10BVXI123
    • Manufacturer No：
      CY7C1021DV33-10BVXI
    • Manufacturer：
      Cypress Semiconductor
    • Category：
      Memory
    • Datasheet：
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    • SKU：
      3845716
    • Description：
      e1 Surface Mount CY7C1021 Tray ic memory 100MHz 10ns 8mm 60mA
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    CY7C1021DV33-10BVXI
    • Manufacturer No：
      CY7C1021DV33-10BVXI
    • Manufacturer：
      Cypress Semiconductor
    • Category：
      Memory
    • Datasheet：
      CY7C1021DV33-10BVXI
    • SKU：
      3845716
    • Description：
      e1 Surface Mount CY7C1021 Tray ic memory 100MHz 10ns 8mm 60mA

    User Guide

    User Guide

    CY7C1021DV33-10BVXI Details

    e1 Surface Mount CY7C1021 Tray ic memory 100MHz 10ns 8mm 60mA

    CY7C1021DV33-10BVXI Specification Parameters

    • Part Status: Active
    • Mounting Type: Surface Mount
    • Number of Functions: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Supply Voltage: 3.3V
    • Packaging: Tray
    • REACH SVHC: No SVHC
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Supply Voltage-Min (Vsup): 3V
    • Number of Terminations: 48
    • Pin Count: 48
    • Terminal Position: BOTTOM
    • Max Frequency: 100MHz
    • Output Characteristics: 3-STATE
    • Length: 8mm
    • Voltage - Supply: 3V~3.6V
    • Memory Format: SRAM
    • Word Size: 16b
    • Supply Voltage-Max (Vsup): 3.63V
    • Sync/Async: Asynchronous
    • Technology: SRAM - Asynchronous
    • Density: 1 Mb
    • Memory Size: 1Mb 64K x 16
    • Base Part Number: CY7C1021
    • RoHS Status: ROHS3 Compliant
    • Mount: Surface Mount
    • Number of Ports: 1
    • Radiation Hardening: No
    • Factory Lead Time: 6 Weeks
    • Operating Supply Voltage: 3.3V
    • Memory Width: 16
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Operating Temperature: -40°C~85°C TA
    • Number of Pins: 48
    • Standby Voltage-Min: 2V
    • Memory Interface: Parallel
    • JESD-609 Code: e1
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Memory Type: Volatile
    • Nominal Supply Current: 60mA
    • Write Cycle Time - Word, Page: 10ns
    • Address Bus Width: 16b
    • I/O Type: COMMON
    • Published: 1996
    • Terminal Pitch: 0.75mm
    • Standby Current-Max: 0.003A
    • Package / Case: 48-VFBGA
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