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- Manufacturer No：S25FL512SAGMFIR11
- Manufacturer：Cypress Semiconductor
- Category：Memory
- Datasheet：S25FL512SAGMFIR11
- SKU：3831598
- Description：3A991.B.1.A Surface Mount Tube 64MX8 ic memory 133MHz 10.3mm 0.0001A 512Mb
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User Guide
S25FL512SAGMFIR11 Details
3A991.B.1.A Surface Mount Tube 64MX8 ic memory 133MHz 10.3mm 0.0001A 512Mb
S25FL512SAGMFIR11 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Alternate Memory Width: 1
- Surface Mount: YES
- Memory Width: 8
- Packaging: Tube
- Peak Reflow Temperature (Cel): 260
- Published: 2015
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Programming Voltage: 3V
- Terminal Pitch: 1.27mm
- Memory Format: FLASH
- Supply Voltage-Min (Vsup): 2.7V
- Serial Bus Type: SPI
- Height Seated (Max): 2.65mm
- Interface: SPI, Serial
- Clock Frequency: 133MHz
- Package / Case: 16-SOIC (0.295, 7.50mm Width)
- HTS Code: 8542.32.00.51
- ECCN Code: 3A991.B.1.A
- Memory Interface: SPI - Quad I/O
- Page Size: 512B
- Series: FL-S
- Organization: 64MX8
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Terminations: 16
- Data Retention Time-Min: 20
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 3V
- Factory Lead Time: 13 Weeks
- Operating Temperature: -40°C~85°C TA
- Supply Voltage-Max (Vsup): 3.6V
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Address Bus Width: 32b
- Length: 10.3mm
- JESD-30 Code: R-PDSO-G16
- Technology: FLASH - NOR
- Write Protection: HARDWARE/SOFTWARE
- Endurance: 100000 Write/Erase Cycles
- Standby Current-Max: 0.0001A
- Memory Size: 512Mb 64M x 8
- Density: 512 Mb
- Supply Current-Max: 0.061mA
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