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- Manufacturer No：S29GL128S90TFI020
- Manufacturer：Cypress Semiconductor
- Category：Memory
- Datasheet：S29GL128S90TFI020
- SKU：3831447
- Description：Asynchronous Active Tin BOTTOM/TOP FLASH Memory -40C~85C TA 2.7V 128Mb 60mA
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User Guide
S29GL128S90TFI020 Details
Asynchronous Active Tin BOTTOM/TOP FLASH Memory -40C~85C TA 2.7V 128Mb 60mA
S29GL128S90TFI020 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Lead Free: Lead Free
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Peak Reflow Temperature (Cel): 260
- Supply Voltage: 3V
- Factory Lead Time: 13 Weeks
- Terminal Pitch: 0.5mm
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Number of Pins: 56
- Number of Sectors/Size: 128
- Voltage - Supply: 2.7V~3.6V
- Word Size: 16b
- Technology: FLASH - NOR
- Height: 1.05mm
- Length: 18.5mm
- Access Time: 90ns
- Width: 14.1mm
- Sector Size: 64K
- Memory Size: 128Mb 8M x 16
- Boot Block: BOTTOM/TOP
- Organization: 16MX8
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Radiation Hardening: No
- Data Polling: YES
- Ready/Busy: YES
- JESD-609 Code: e3
- Contact Plating: Tin
- Packaging: Tray
- Published: 2012
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Programming Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Supply Voltage-Min (Vsup): 2.7V
- Number of Terminations: 56
- Memory Type: Non-Volatile
- Nominal Supply Current: 60mA
- Data Bus Width: 16b
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Power Supplies: 3/3.3V
- Write Cycle Time - Word, Page: 60ns
- Standby Current-Max: 0.0001A
- Package / Case: 56-TFSOP (0.724, 18.40mm Width)
- Density: 128 Mb
- Series: GL-S
- Page Size: 32B
- Address Bus Width: 23b
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