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- Manufacturer No：S29GL256P11TFIV20
- Manufacturer：Cypress Semiconductor
- Category：Memory
- Datasheet：S29GL256P11TFIV20
- SKU：3834346
- Description：3A991.B.1.A Surface Mount Tray FLASH - NOR ic memory 110ns 1.2mm 110mA 256Mb
User Guide
User Guide
S29GL256P11TFIV20 Details
3A991.B.1.A Surface Mount Tray FLASH - NOR ic memory 110ns 1.2mm 110mA 256Mb
S29GL256P11TFIV20 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Data Polling: YES
- Ready/Busy: YES
- JESD-609 Code: e3
- Alternate Memory Width: 8
- Packaging: Tray
- Factory Lead Time: 16 Weeks
- Ambient Temperature Range High: 85°C
- Time@Peak Reflow Temperature-Max (s): 40
- Programming Voltage: 3V
- Terminal Pitch: 0.5mm
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Number of Pins: 56
- Published: 1997
- Data Bus Width: 8b
- Sync/Async: Asynchronous
- Technology: FLASH - NOR
- Voltage - Supply: 1.65V~3.6V
- Length: 18.4mm
- Access Time (Max): 110 ns
- Memory Size: 256Mb 32M x 8
- Density: 256 Mb
- Page Size: 8/16words
- Power Supplies: 1.8/3.33/3.3V
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Memory Width: 1
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Contact Plating: Tin
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Supply Voltage-Min (Vsup): 2.7V
- Number of Terminations: 56
- Height: 1.2mm
- Memory Type: Non-Volatile
- Number of Sectors/Size: 256
- Nominal Supply Current: 110mA
- HTS Code: 8542.32.00.51
- Standby Current-Max: 0.000005A
- ECCN Code: 3A991.B.1.A
- Write Cycle Time - Word, Page: 110ns
- Package / Case: 56-TFSOP (0.724, 18.40mm Width)
- Sector Size: 128K
- Series: GL-P
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