S34ML08G101TFI000Cypress Semiconductor
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    S34ML08G101TFI000123
    • Manufacturer No：
      S34ML08G101TFI000
    • Manufacturer：
      Cypress Semiconductor
    • Category：
      Memory
    • Datasheet：
      Get the PDF file
    • SKU：
      3834021
    • Description：
      Asynchronous Active Tin 2013 FLASH Memory -40C~85C TA 2.7V 8Gb 30mA
    • Quantity：
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    • Qty Unit Price price
    • 1 $13.519 $13.519
    • 10 $13.385 $133.85
    • 100 $13.252 $1325.2
    • 1000 $13.12 $13120

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    S34ML08G101TFI000
    • Manufacturer No：
      S34ML08G101TFI000
    • Manufacturer：
      Cypress Semiconductor
    • Category：
      Memory
    • Datasheet：
      S34ML08G101TFI000
    • SKU：
      3834021
    • Description：
      Asynchronous Active Tin 2013 FLASH Memory -40C~85C TA 2.7V 8Gb 30mA

    User Guide

    User Guide

    S34ML08G101TFI000 Details

    Asynchronous Active Tin 2013 FLASH Memory -40C~85C TA 2.7V 8Gb 30mA

    S34ML08G101TFI000 Specification Parameters

    • Part Status: Active
    • Data Polling: NO
    • Mounting Type: Surface Mount
    • Number of Functions: 1
    • Command User Interface: YES
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Terminal Position: DUAL
    • Published: 2013
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Operating Supply Voltage: 3V
    • Factory Lead Time: 14 Weeks
    • Terminal Pitch: 0.5mm
    • Number of Terminations: 48
    • Supply Voltage-Max (Vsup): 3.6V
    • Memory Interface: Parallel
    • Nominal Supply Current: 30mA
    • Data Bus Width: 8b
    • Voltage - Supply: 2.7V~3.6V
    • HTS Code: 8542.32.00.51
    • Length: 18.4mm
    • Page Size: 2kB
    • Address Bus Width: 19b
    • Standby Current-Max: 0.00005A
    • Memory Size: 8Gb 1G x 8
    • Series: ML-1
    • Number of Sectors/Size: 8K
    • Toggle Bit: NO
    • RoHS Status: ROHS3 Compliant
    • Mount: Surface Mount
    • Radiation Hardening: No
    • Ready/Busy: YES
    • Lead Free: Lead Free
    • Memory Width: 8
    • Packaging: Tray
    • REACH SVHC: No SVHC
    • Supply Voltage: 3V
    • Programming Voltage: 3V
    • Operating Temperature: -40°C~85°C TA
    • Memory Format: FLASH
    • Number of Pins: 48
    • Supply Voltage-Min (Vsup): 2.7V
    • Height: 1.2mm
    • Memory Type: Non-Volatile
    • Word Size: 8b
    • Sync/Async: Asynchronous
    • Write Cycle Time - Word, Page: 25ns
    • Technology: FLASH - NAND
    • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
    • Access Time: 25 μs
    • Sector Size: 128K
    • Organization: 1GX8
    • Density: 8 Gb
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